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Large Magnetoresistance and 15 Boolean Logic Functions Based on a ZnCoO Film and Diode Combined Device
Author(s) -
Zhang Kun,
Zhang Yue,
Zhang Zhizhong,
Zheng Zhenyi,
Wang Guanda,
Zhang Youguang,
Liu Qiwei,
Yan Shishen,
Zhao Weisheng
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800812
Subject(s) - materials science , magnetoresistance , diode , spintronics , magnetic field , optoelectronics , sensitivity (control systems) , coupling (piping) , magnetoresistive random access memory , electrical engineering , electronic engineering , computer science , ferromagnetism , condensed matter physics , physics , engineering , computer hardware , random access memory , metallurgy , quantum mechanics
Magnetoresistance (MR) effects not only have great applications in magnetic sensors, hard disk drive (HDD) read heads, and magnetic random access memory (MRAM), but also are expected to develop next‐generation computing systems. Recently, the MR ratio is found to be significantly increased in diode‐enhanced MR (DEMR) devices by coupling the Hall effect or anomalous Hall effect of magnetic materials and the nonlinear transport property of diodes. However, these devices cannot satisfy the requirement of high sensitivity at low magnetic field and small working current simultaneously. Here, large MR ratio (−6850% at 6 T) and high magnetic‐field sensitivity (−875% at 0.04 T) with small working current (<0.5 mA) are achieved at room temperature by combining ZnCoO film and diode. A theoretical model is established quantitatively, which can well explain the experimental observations and be used for evaluating the device performance. Based on this combined device, a logic unit with magnetoelectric symmetry is constructed by introducing a magnet as control bit. Through manipulating the control bit and tuning the working current, 15 Boolean logic functions can be carried out. This work will be beneficial for extending the functionality of spintronic logic‐in‐memory devices and provide a promising solution for realizing emerging computing systems.