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Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process
Author(s) -
Kim SoYoung,
Hwang Jeongwoon,
Kim Yun Ji,
Hwang Hyeon Jun,
Son Myungwoo,
Revannath Nikam,
Ham MoonHo,
Cho Kyeongjae,
Lee Byoung Hun
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800805
Subject(s) - graphene , materials science , dopant , threshold voltage , doping , optoelectronics , fermi level , voltage , nanotechnology , semiconductor , modulation (music) , electrical engineering , transistor , philosophy , physics , engineering , aesthetics , quantum mechanics , electron
A method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n‐type dopant) and poly (acrylic acid) (as a p‐type dopant), are used to pre‐set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n‐type graphene) and 1.2 V (p‐type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction‐based devices, which is a crucial function required to implement graphene‐based electronic devices in integrated circuits.
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