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Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors
Author(s) -
Fang Ruhao,
Cui Xiangyuan,
Khan Mansoor A.,
Stampfl Catherine,
Ringer Simon P.,
Zheng Rongkun
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800797
Subject(s) - phosphorene , materials science , zigzag , electron mobility , optoelectronics , transistor , field effect transistor , graphene , terahertz radiation , monolayer , strain engineering , nanotechnology , band gap , electrical engineering , silicon , geometry , mathematics , voltage , engineering
Abstract Carrier mobility is a key parameter for the operation of electronic devices as it determines the ON state current and switching speed/frequency response of transistors. 2D phosphorene is considered as a potential candidate for field‐effect transistors due to its high mobility. Here it is proposed to further enhance the carrier mobility of phosphorene and device performance via strain engineering. A systematic ab initio investigation on the anisotropic electronic structure of few‐layer phosphorene reveals that the monolayer under 7.5–10% strain along zigzag direction shows an exceptional carrier mobility of ≈10 6 cm 2 V −1 s −1 , which is 10 times higher than the strain‐free case. The simulated device performance shows that strain‐engineered phosphorene–based field‐effect transistors demonstrate a cut‐off frequency of ≈1.14 THz with a gate length of 1.0 micron and 112 THz with a sub‐10 nm gate length.