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Enhanced Switching Stability in Forming‐Free SiN x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure
Author(s) -
Jiang Peng Fei,
Gao Hai Xia,
Yang Mei,
Zhang Zhen Fei,
Ma Xiao Hua,
Yang Yin Tang
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800739
Subject(s) - materials science , resistive random access memory , doping , resistive touchscreen , optoelectronics , random access memory , power consumption , power (physics) , voltage , non volatile memory , random access , stability (learning theory) , scaling , nanotechnology , electrical engineering , computer science , machine learning , physics , geometry , mathematics , quantum mechanics , computer hardware , engineering , operating system
In this study, forming‐free and reliable resistive switching characteristics are demonstrated by using Pt doping in a stacked structure of SiN x resistive random access memory cells. Pt nanoparticles are embedded in situ and the size of them are about 1–2 nm. It ensures the potential of size scaling for the devices. Compared to those without Pt doping, a more reliable switching stability with better endurance and retention characteristics is obtained. The operating voltages and currents are low so that it is suitable for low power consumption applications. Films deposited at higher temperature show better compactness.