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Flexible β‐Ga 2 O 3 Nanomembrane Schottky Barrier Diodes
Author(s) -
Swinnich Edward,
Hasan Md Nazmul,
Zeng Ke,
Dove Yash,
Singisetti Uttam,
Mazumder Baishakhi,
Seo JungHun
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800714
Subject(s) - materials science , optoelectronics , substrate (aquarium) , diode , schottky barrier , band gap , schottky diode , nanotechnology , oceanography , geology
Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga 2 O 3 nanomembranes (NMs). In order to realize flexible high power β‐Ga 2 O 3 SBDs, sub‐micron thick freestanding β‐Ga 2 O 3 NMs are created from a bulk β‐Ga 2 O 3 substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga 2 O 3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga 2 O 3 SBDs exhibit the record high critical breakdown field strength ( E c ) of 1.2 MV cm −1 in the flat condition and 1.07 MV cm −1 of E c under the bending condition. Overall, flexible β‐Ga 2 O 3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high‐performance flexible applications.