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Improved Hole Injection into Perovskite Light‐Emitting Diodes Using A Black Phosphorus Interlayer
Author(s) -
Ricciardulli Antonio Gaetano,
Yang Sheng,
Kotadiya Naresh B.,
Wetzelaer GertJan A. H.,
Feng Xinliang,
Blom Paul W. M.
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800687
Subject(s) - materials science , perovskite (structure) , light emitting diode , optoelectronics , diode , black phosphorus , quantum efficiency , stack (abstract data type) , leakage (economics) , polystyrene sulfonate , layer (electronics) , composite material , chemical engineering , pedot:pss , computer science , engineering , programming language , economics , macroeconomics
The light‐output and efficiency of perovskite based light‐emitting diodes (PeLEDs) is limited by hole injection and high leakage current, generated by a high hole injection barrier and poor perovskite morphology, respectively. Here, a feasible strategy is reported to overcome both constraints by introducing 2D black phosphorus (BP) as hole injection layer in the PeLED stack. A continuous film composed of high‐quality, ultrathin, and large BP sheets on top of poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate simultaneously improves the hole injection and morphology of the green‐emitting inorganic CsPbBr 3 perovskite. Inclusion of the BP enhances the external quantum efficiency of CsPbBr 3 based PeLEDs from 0.7% to 2.8%.