Achieving High‐Performance Solution‐Processed Deep‐Red/Near‐Infrared Organic Light‐Emitting Diodes with a Phenanthroline‐Based and Wedge‐Shaped Fluorophore | Zendy

Zhang Youming | Zendy; Wu Jiatao | Zendy; Song Jun | Zendy; Chen Zhao | Zendy; He Junjie | Zendy; Wang Xin | Zendy; Liu Haiyang | Zendy; Chen Shuming | Zendy; Qu Junle | Zendy; Wong WaiYeung | Zendy

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Achieving High‐Performance Solution‐Processed Deep‐Red/Near‐Infrared Organic Light‐Emitting Diodes with a Phenanthroline‐Based and Wedge‐Shaped Fluorophore

Author(s) -

Zhang Youming,

Wu Jiatao,

Song Jun,

Chen Zhao,

He Junjie,

Wang Xin,

Liu Haiyang,

Chen Shuming,

Qu Junle,

Wong WaiYeung

Publication year - 2019

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201800677

Subject(s) - fluorophore , materials science , photoluminescence , quantum yield , phenanthroline , oled , near infrared spectroscopy , photochemistry , optoelectronics , doping , solvent , acceptor , fluorescence , nanotechnology , optics , inorganic chemistry , chemistry , organic chemistry , layer (electronics) , physics , condensed matter physics

A phenanthroline‐based donor–acceptor type fluorophore is designed and synthesized, and its thermal, photophysical, and electrochemical characteristics are investigated. This fluorophore displays a strong deep‐red/near‐infrared (DR/NIR) emission with the photoluminescence quantum yield of 74.8% in nonpolar n ‐hexane solvent and 4.5% in polar chloroform solvent, as well as 1.26% in neat film and 18.4% in 5 wt% doped poly(methyl methacrylate) film. DR/NIR devices are fabricated, with emission peaks at 670–696 nm and external quantum efficiencies of 3.18–1.43% at different doping concentrations.

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