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Achieving High‐Performance Solution‐Processed Deep‐Red/Near‐Infrared Organic Light‐Emitting Diodes with a Phenanthroline‐Based and Wedge‐Shaped Fluorophore
Author(s) -
Zhang Youming,
Wu Jiatao,
Song Jun,
Chen Zhao,
He Junjie,
Wang Xin,
Liu Haiyang,
Chen Shuming,
Qu Junle,
Wong WaiYeung
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800677
Subject(s) - fluorophore , materials science , photoluminescence , quantum yield , phenanthroline , oled , near infrared spectroscopy , photochemistry , optoelectronics , doping , solvent , acceptor , fluorescence , nanotechnology , optics , inorganic chemistry , chemistry , organic chemistry , layer (electronics) , physics , condensed matter physics
A phenanthroline‐based donor–acceptor type fluorophore is designed and synthesized, and its thermal, photophysical, and electrochemical characteristics are investigated. This fluorophore displays a strong deep‐red/near‐infrared (DR/NIR) emission with the photoluminescence quantum yield of 74.8% in nonpolar n ‐hexane solvent and 4.5% in polar chloroform solvent, as well as 1.26% in neat film and 18.4% in 5 wt% doped poly(methyl methacrylate) film. DR/NIR devices are fabricated, with emission peaks at 670–696 nm and external quantum efficiencies of 3.18–1.43% at different doping concentrations.