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Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions
Author(s) -
Sassine Gilbert,
Nail Cécile,
Blaise Philippe,
Sklenard Benoit,
Bernard Mathieu,
Gassilloud Rémy,
Marty Aurélie,
Veillerot Marc,
Vallée Christophe,
Nowak Etienne,
Molas Gabriel
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800658
Subject(s) - resistive random access memory , materials science , protein filament , electrical conductor , electrode , optoelectronics , coupling (piping) , oxide , non volatile memory , oxygen , nanotechnology , copper , composite material , metallurgy , chemistry , organic chemistry
Here, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide‐based conductive bridge random access memories (hybrid resistive random access memories (HRRAMs)) performances is investigated. To this aim, several RRAM technologies are studied using various resistive layers and top electrodes. Material analyses allow to highlight the hybrid aspect of HRRAM conductive filament. Density functional theory simulations are used to extract microscopic features and highlight differences from a material point of view. Integrated RRAM technology performances such as window margin, endurance, and retention are then measured to analyze copper and oxygen vacancy influence on device characteristics. A new RRAM classification correlating filament composition and memory performances is proposed.