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Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices
Author(s) -
GonzalezRosillo Juan Carlos,
OrtegaHernandez Rafael,
Arndt Benedikt,
Coll Mariona,
Dittmann Regina,
Obradors Xavier,
Palau Anna,
Suñe Jordi,
Puig Teresa
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800629
Subject(s) - materials science , electrical conductor , conductor , resistive touchscreen , oxygen , nanotechnology , optoelectronics , terminal (telecommunication) , metal–insulator transition , fabrication , resistive random access memory , engineering physics , metal , electrical engineering , voltage , computer science , composite material , chemistry , telecommunications , medicine , alternative medicine , organic chemistry , pathology , metallurgy , engineering
Resistive switching effects are in a superb position to tackle the challenges for the near future of nanoelectronics and neuromorphics. Material‐wise, the outstanding properties of strongly correlated metallic perovskite oxides, in particular, those displaying metal–insulator transition can be exploited for a new generation of devices based on a volume resistive switching (VRS) phenomenon beyond filamentary and interface ideas. This study reports a full description of this new and robust physical mechanism governing VRS memory effects in mixed‐valence mixed‐conductor metallic La 1− x Sr x MnO 3− y perovskites by identifying the role and rate limiting steps of oxygen exchange through oxygen partial pressure experiments. It is demonstrated that oxygen migration can be smartly engineered by introducing a CeO 2− x capping layer, which is further used to validate the VRS phenomenon by operating a nonvolatile and volumetric proof‐of‐concept gate‐controlled three‐terminal conductive bridge device.