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Suppressing Ambipolar Characteristics of WSe 2 Field Effect Transistors Using Graphene Oxide
Author(s) -
Oh Hye Min,
Park Chulho,
Bang Seungho,
Yun Seok Joon,
Duong Ngoc Thanh,
Jeong Mun Seok
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800608
Subject(s) - tungsten diselenide , ambipolar diffusion , materials science , graphene , field effect transistor , nanotechnology , oxide , transistor , optoelectronics , monolayer , transition metal , electron , electrical engineering , chemistry , physics , biochemistry , engineering , quantum mechanics , voltage , metallurgy , catalysis
Monolayer (1L) tungsten diselenide (WSe 2 ) is of interest for next generation ultrathin flexible electronic devices. However, typical WSe 2 field effect transistors (FETs) show ambipolar characteristics that are not desirable for complementary field‐effect‐transistors and circuits. Here, significant suppression of the ambipolar characteristics of a 1L‐WSe 2 FET is demonstrated by using an electron withdrawing functional group of graphene oxide (GO). The pristine 1L‐WSe 2 FET shows n‐type dominant ambipolar characteristics, whereas the GO coated 1L‐WSe 2 FET shows unipolar p‐type behavior with a huge decrease (1/10 6 ) of current level of the n‐channel. Also, the current level of the p‐channel increases up to ten times that of the pristine 1L‐WSe 2 FET. These results are applicable for the realization of flexible nanoscale digital logic devices by using transition metal dichalcogenides.