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9,10‐Imide‐Pyrene‐Fused Pyrazaacenes (IPPA) as N‐Type Doping Materials for High‐Performance Nonvolatile Organic Field Effect Transistor Memory Devices
Author(s) -
Wu ZeHua,
Sun WenJing,
Tian HuHu,
Yu ZeFeng,
Guo RuiXue,
Shao Xiangfeng,
Zhang HaoLi
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800598
Subject(s) - materials science , organic field effect transistor , doping , imide , optoelectronics , non volatile memory , transistor , dipole , field effect transistor , organic chemistry , electrical engineering , voltage , polymer chemistry , chemistry , engineering
Abstract The fabrication of high‐performance nonvolatile organic field effect transistor (OFET) memory devices is reported using a series of pyrene‐fused pyrazaacene (PPA) and 9,10‐imide‐pyrene‐fused pyrazaacene (IPPA) derivatives as n‐type doping components. The obtained memory devices exhibit stable switching behaviors (>100 times) and good retention properties (>10 4 s). Devices based on chlorinated IPPA (IPPA‐Cl) show the largest memory window of 40.8 V, with a trapping charge density of 2.66 × 10 12 cm −2 and on/off ratio higher than 10 6 . Our investigation reveals that low‐lying lowest unoccupied molecular orbital energy levels and small dipole moment are key parameters for achieving high memory performance. This work provides a general guideline for the design of n‐type organic semiconductors as highly efficient doping materials for organic memory devices.