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Recent Advances in Memory Devices with Hybrid Materials
Author(s) -
Hwang Bohee,
Lee JangSik
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800519
Subject(s) - materials science , miniaturization , non volatile memory , nanotechnology , fabrication , computer data storage , power consumption , resistive random access memory , voltage , computer science , optoelectronics , electrical engineering , power (physics) , computer hardware , medicine , alternative medicine , physics , engineering , pathology , quantum mechanics
Increasing demands for information‐storage capacity and for miniaturization of memory cells have driven exploration of new‐generation data storage devices, because the conventional Si‐based memory technology is approaching its fundamental physical limits. Hybrid materials and novel device structure may lead to a paradigm shift toward memory devices that have high density, multifunctionality, and low power consumption. Here, the structure and operation mechanism of resistive switching memory devices are described, then recent advances in hybrid materials (e.g., graphene‐based polymer composites, organic–inorganic hybrid perovskite materials) for fabrication of these devices are summarized. How to increase the ON/OFF ratio and the density of memories, and to decrease programming voltage by selecting appropriate active materials, and engineering the active layers, are also demonstrated. Finally, the current challenges and future directions in memory devices based on hybrid materials are summarized.