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High Bipolar Conductivity and Robust In‐Plane Spontaneous Electric Polarization in Selenene
Author(s) -
Wang Dan,
Tang LiMing,
Jiang XingXing,
Tan JieYao,
He MengDong,
Wang XinJun,
Chen KeQiu
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800475
Subject(s) - materials science , monolayer , ferroelectricity , polarization (electrochemistry) , conductivity , polarization density , condensed matter physics , optoelectronics , nanotechnology , chemistry , dielectric , physics , magnetization , quantum mechanics , magnetic field
Selenene has been predicted as a new member of an atomically thin 2D crystalline material family as of last year. With first principle calculations, two different stable phases of selenene, one with the 1T‐MoS 2 ‐like structure (α‐Se) and the other with alternating arrangement structure of deformed four‐membered and six‐membered rings ( b ‐Se) are identified. Further research indicates that monolayer α‐Se exhibits excellent bipolar conductivity, possessing rather high hole mobility close to that of graphene, and monolayer b ‐Se shows a robust in‐plane spontaneous electric polarization of 13.46 m C cm −2 and a polarization reversing barrier of 422 meV per unit cell. The findings offer a promising material for high speed electronic devices and broaden the family of 2D ferroelectric materials, especially the family of elemental ferroelectric materials.