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Dual‐Gate Organic Field‐Effect Transistor for pH Sensors with Tunable Sensitivity
Author(s) -
Pfattner Raphael,
Foudeh Amir M.,
Chen Shucheng,
Niu Weijun,
Matthews James R.,
He Mingqian,
Bao Zhenan
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800381
Subject(s) - materials science , optoelectronics , sensitivity (control systems) , field effect transistor , transistor , organic semiconductor , semiconductor , capacitive coupling , field effect , nanotechnology , electrical engineering , electronic engineering , voltage , engineering
Dual‐gate field‐effect transistors (FETs) based on organic semiconductor polymer and SiO x as the topmost active sensing layer permit monitoring of pH in physiologically relevant conditions in a fast and reversible fashion. Beyond that, due to the bottom gate‐induced field effect, such sensors exhibit tunable sensitivity and provide faster continuous measurements compared to conventional bulky glass bulb pH sensors. pH response of bare SiO x is evaluated independently by means of voltmeter measurements. When assembled in dual‐gate architecture, the pH response of FET devices scales in agreement with the theoretical model, which assumes capacitive coupling, exhibiting an amplification of up to 10. This opens up the possibility for reversible and reliable sensing based on organic semiconductors well beyond pH sensors.