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Solution‐Processed InAs Nanowire Transistors as Microwave Switches
Author(s) -
Mirkhaydarov Bobur,
Votsi Haris,
Sahu Abhishek,
Caroff Philippe,
Young Paul R.,
Stolojan Vlad,
King Simon G.,
Ng Calvin C. H.,
Devabhaktuni Vijaya,
Tan Hoe H.,
Jagadish Chennupati,
Aaen Peter H.,
Shkunov Maxim
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800323
Subject(s) - nanowire , materials science , coplanar waveguide , optoelectronics , microwave , biasing , transistor , modulation (music) , field effect transistor , transmission line , voltage , electrical engineering , telecommunications , physics , computer science , acoustics , engineering
The feasibility of using self‐assembled InAs nanowire bottom‐gated field‐effect transistors as radio‐frequency and microwave switches by direct integration into a transmission line is demonstrated. This proof of concept is demonstrated as a coplanar waveguide (CPW) microwave transmission line, where the nanowires function as a tunable impedance in the CPW through gate biasing. The key to this switching capability is the high‐performance, low impedance InAs nanowire transistor behavior with field‐effect mobility of ≈300 cm 2 V −1 s −1 , on/off ratio of 10 3 , and resistance modulation from only 50 Ω in the full accumulation mode, to ≈50 kΩ when the nanowires are depleted of charge carriers. The gate biasing of the nanowires within the CPW results in a switching behavior, exhibited by a ≈10 dB change in the transmission coefficient, S 21 , between the on/off switching states, over 5–33 GHz. This frequency range covers both the microwave and millimeter‐wave bands dedicated to Internet of things and 5G applications. Demonstration of these switches creates opportunities for a new class of devices for microwave applications based on solution‐processed semiconducting nanowires.