Premium
Enhanced Charge Transport in Hybrid Perovskite Field‐Effect Transistors via Microstructure Control
Author(s) -
Zeidell Andrew M.,
Tyznik Colin,
Jennings Laura,
Zhang Chuang,
Lee Hyunsu,
Guthold Martin,
Vardeny Z. Valy,
Jurchescu Oana D.
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800316
Subject(s) - ambipolar diffusion , materials science , perovskite (structure) , passivation , transistor , charge carrier , field effect transistor , electron mobility , nanotechnology , microstructure , grain boundary , thin film transistor , annealing (glass) , optoelectronics , chemical physics , chemical engineering , electron , electrical engineering , chemistry , composite material , physics , layer (electronics) , quantum mechanics , voltage , engineering
Hybrid organic–inorganic perovskites have recently gained immense attention due to their unique optical and electronic properties and low production cost, which make them promising candidates for a wide range of optoelectronic devices. But unlike most other technologies, the breakthroughs witnessed in hybrid perovskite optoelectronics have outgrown the basic understanding of the fundamental material properties. For example, the effectiveness of charge transport in relation to film microstructure and processing has remained elusive. In this study, field‐effect transistors are fabricated and evaluated in order to probe the nature and dynamics of charge transport in thin films of methylammonium lead iodide. A dramatic improvement is shown in the electrical properties upon solvent vapor annealing. The resulting devices exhibit ambipolar transport, with room‐temperature hole and electron mobilities exceeding 10 cm 2 V −1 s −1 . The remarkable enhancement in charge carrier mobility is attributed to the increase in the grain size and passivation of grain boundaries via the formation of solvent complexes.