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Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiN x O y /TiN
Author(s) -
Dutta Mrinmoy,
Maikap Siddheswar,
Qiu Jiantai Timothy
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800288
Subject(s) - tin , materials science , iridium , x ray photoelectron spectroscopy , resistive random access memory , analytical chemistry (journal) , layer (electronics) , indium tin oxide , chemical engineering , nanotechnology , electrode , metallurgy , chemistry , biochemistry , chromatography , engineering , catalysis
Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer thickness ranging from 2 to 20 nm in a Cu/Ir/TiN x O y /TiN resistive switching memory device is investigated for the first time. Transmission electron microscopy (TEM) shows a porous Ir layer, and X‐ray photoelectron spectroscopy (XPS) is performed to determine the Ir 0 , Ir 3+ /Ir 4+ oxidation states, which are responsible for a super‐Nernstian pH sensitivity of 125.5 mV pH −1 as well as a low concentration of 1 × 10 −12 m tributyrin detected using a 40 nm thick Ir in Ir/TiN x O y /TiN structure. The 5 nm thick Ir layer in the Cu/Ir/TiN x O y /TiN structure shows current–voltage switching characteristics for 3000 consecutive cycles, a stable RESET voltage, a long program/erase (P/E) endurance of >10 9 cycles under a P/E current of 300 µA at a high speed of 100 ns, and neuromorphic phenomena compared to those of other Ir thicknesses. Cu migration into the TiN x O y oxide‐electrolyte is shown by TEM observations. The tributyrin detection ranging from 1 × 10 −12 to 100 × 10 −12 m using a resistive switching memory device paves the way for the early diagnosis of human diseases as well as artificial intelligence applications in the near future.