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Light‐Induced Anomalous Resistive Switches Based on Individual Organic–Inorganic Halide Perovskite Micro‐/Nanofibers
Author(s) -
Zhao Jie,
Li Shujun,
Tong Wenchao,
Chen Guanwen,
Xiao Yanhe,
Lei Shuijin,
Cheng Baochang
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800206
Subject(s) - materials science , perovskite (structure) , optoelectronics , electrode , halide , electrolyte , hysteresis , rectification , nanotechnology , voltage , chemical engineering , inorganic chemistry , electrical engineering , chemistry , physics , quantum mechanics , engineering
Organic–inorganic halide perovskite (OHP) materials have attracted remarkable attention for the great promise of optoelectronic applications. Unfortunately, hysteresis in the current–voltage response links to the stability and reliability assessment of OHP photovoltaic device that must be addressed. Here, light‐induced antipolar resistive switching (RS) effect is demonstrated in an individual MAPbI 3 micro‐/nanofiber–based two‐terminal device after aging for 4 d. The antipolar RS is attributed to reversible electrochemical reactions in the vicinity of Ag electrode, where Ag serves as the work electrode and MAPbI 3 acts as the solid electrolyte. That makes conductive behavior of antipolar RS similar with cyclic voltammetry curves of capacitances. Concomitantly, the antipolar RS shows slow dissipation kinetics, which is employed to realize the application of nonvolatile memories. This work establishes the potential for the versatile solid state devices that can efficiently couple interface reaction, charge migration, and photoelectrical effects in an individual micro‐/nanodevice.