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Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film
Author(s) -
Poggini Lorenzo,
Gonidec Mathieu,
GonzálezEstefan Juan H.,
Pecastaings Gilles,
Gobaut Benoît,
Rosa Patrick
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800204
Subject(s) - spin crossover , materials science , eutectic system , density functional theory , quantum tunnelling , thin film , condensed matter physics , sublimation (psychology) , spin states , crossover , nanotechnology , optoelectronics , chemistry , physics , computational chemistry , psychology , alloy , composite material , psychotherapist , artificial intelligence , computer science
Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TS Au and investigated by X‐ray and UV photoelectron spectroscopies. Temperature‐dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large‐area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin‐state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large‐area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO‐based switchable molecular junctions as functional devices.