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Fully Transparent and Flexible Capacitors with ZrO 2 as the Dielectric Layer
Author(s) -
Zhang Guozhen,
Guo Tao,
He Xiaobo,
Ai Zhiwei,
Wu Hao,
Liu Chang
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800195
Subject(s) - capacitor , materials science , polyethylene naphthalate , capacitance , film capacitor , dielectric , atomic layer deposition , electrode , layer (electronics) , optoelectronics , composite material , electrical engineering , voltage , chemistry , engineering
Transparent and flexible capacitors with ZrO 2 as the dielectric layer are fabricated directly on polyethylene naphthalate (PEN) substrates by an in situ atomic layer deposition method. The hybrid AlZnO and silver nanowires serve as the bottom electrode. The capacitors exhibit a high capacitance density of 15.2 fF µm −2 and an ultralow leakage current (1.0 × 10 −9 A cm −2 at 1 V). Bending tests reveal that the capacitors can be outwardly bended for up to 1000 times at a radius of 7 mm without any deterioration in electrical performance. Both the top and bottom electrodes of such capacitors are based on ZnO materials, which can effectively reduce the manufacturing cost and promote the mass production process.