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1D Hexagonal HC(NH 2 ) 2 PbI 3 for Multilevel Resistive Switching Nonvolatile Memory
Author(s) -
Yang JuneMo,
Kim SeulGi,
Seo JaYoung,
Cuhadar Can,
Son DaeYong,
Lee Donghwa,
Park NamGyu
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800190
Subject(s) - materials science , memristor , resistive random access memory , cluster (spacecraft) , hexagonal crystal system , non volatile memory , optoelectronics , condensed matter physics , nanotechnology , crystallography , electrode , electronic engineering , chemistry , physics , computer science , engineering , programming language
Organic–inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt‐scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH 2 ) 2 PbI 3 (FAPbI 3 ) depending on structural phase is reported. It is found that 1D hexagonal FAPbI 3 (δ‐FAPbI 3 ), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (α‐FAPbI 3 ), formed at temperature higher than 150 °C, is inactive. Failure of switching from low resistance state to high resistance state is found for α‐FAPbI 3 , while δ‐FAPbI 3 shows stable switching behavior. Density functional calculation reveals that iodine cluster in isotropic 3D α‐FAPbI 3 is so stable after forming filament that the filament is hard to be ruptured at off state. However, for anisotropic δ‐FAPbI 3 , iodine cluster is not stable and migration barrier is much lower for c ‐axis (0.48 eV) than for ab ‐plane (0.9 eV), which is beneficial for switching. The memristor devices based on δ‐FAPbI 3 demonstrate endurance up to 1200 cycles with On/Off ratio (>10 5 ), retention time up to 3000 s, multilevel storage capacity, and working even at 80 °C.