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Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO 3 Heterostructures
Author(s) -
Li Dong,
Zheng Dongxing,
Jin Chao,
Li Peng,
Liu Xinjun,
Zheng Wanchao,
Bai Haili
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800171
Subject(s) - heterojunction , materials science , electric field , optoelectronics , ferroelectricity , modulation (music) , non volatile memory , epitaxy , nanotechnology , dielectric , physics , layer (electronics) , quantum mechanics , philosophy , aesthetics
For developing the high‐density and high‐speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO 3 heterostructures are fabricated on LaAlO 3 substrates by magnetron sputtering. The electric field‐modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field‐modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co‐modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.