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Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures
Author(s) -
Li Tiaoyang,
Tian Mengchuan,
Li Shengman,
Huang Mingqiang,
Xiong Xiong,
Hu Qianlan,
Li Sichao,
Li Xuefei,
Wu Yanqing
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800138
Subject(s) - materials science , black phosphorus , optoelectronics , transistor , electronics , fabrication , dielectric , gate dielectric , electrical engineering , voltage , engineering , medicine , alternative medicine , pathology
Black phosphorus (BP) has great potential in high‐performance radio frequency electronics owing to its high carrier mobility and velocity. The electrical properties of black phosphorus experience rapid deterioration upon exposure to moisture and oxygen, which poses a challenge in the device fabrication, especially the deposition of gate dielectrics using conventional top‐gate approach. Herein, a Damascene‐like planarization process is presented to create an embedded gate stack with high‐κ dielectrics under a gate‐first approach, which minimizes surface impurities and traps at the black phosphorus/high‐κ interface and preserves the high‐quality black phosphorus channel. The radio frequency performances of this structure improve at least twice compared with conventional top‐gate structures. A record high extrinsic f max of 17 GHz at room temperature for the device with 400 nm gate‐length is achieved, which further increases to around 31 GHz at 20 K. Finally, BP transistor‐based mixers operating at gigahertz frequency are also demonstrated for the first time.