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Local Joule Heating Mimicking Electroresistance‐Like Behavior in Antiperovskite Mn 3 GaC
Author(s) -
Deng Sihao,
Fischer Gerda,
Srichandan Sasmita,
Wang Lielin,
Wang Cong,
Sürgers Christoph
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800028
Subject(s) - materials science , antiperovskite , electrical resistivity and conductivity , joule heating , phase (matter) , resistive touchscreen , magnetization , antiferromagnetism , phase transition , hysteresis , condensed matter physics , composite material , layer (electronics) , magnetic field , chemistry , physics , nitride , electrical engineering , engineering , organic chemistry , quantum mechanics
Abstract Electroresistance has become a stimulating research topic because of its potential applications in next‐generation nonvolatile memory technology. Here, an electroresistance‐like behavior of the antiperovskite Mn 3 GaC compound around the antiferromagnetic–intermediate phase transition is reported. A high sensing current significantly decreases the fraction of the antiferromagnetic phase of higher resistivity relative to the intermediate phase of lower resistivity upon warming, showing a resistivity change up to 50%. Through extensive studies of the resistivity at different sample locations and of the magnetization under applied current, it is unambiguously shown that this electroresistance‐like behavior originates from the local Joule heating of the sample due to high‐resistive lead contacts and not from an intrinsic effect. These findings open an available avenue to explore electroresistance‐like behavior by achieving phase coexistence of a high‐ and low‐resistivity phase under the driving force of local Joule heating.