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Thin‐Film Semiconductors: Ambipolar Organic Field‐Effect Transistors Based on a Dual‐Function, Ultrathin and Highly Crystalline 2,9‐didecyldinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (C 10 ‐DNTT) Layer (Adv. Electron. Mater. 12/2017)
Author(s) -
Huang Shuyun,
Peng Boyu,
Chan Paddy Kwok Leung
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201770057
Subject(s) - ambipolar diffusion , materials science , organic semiconductor , thiophene , bilayer , semiconductor , thin film , field effect transistor , dual function , nanotechnology , layer (electronics) , optoelectronics , transistor , organic chemistry , electrical engineering , chemistry , physics , plasma , engineering , quantum mechanics , voltage , contouring , membrane , engineering drawing , biology , genetics
Bilayer ambipolar OFETs based on thermal evaporated and dual‐solution‐shearing (DSS) processed ultra‐thin films as the bottom template layer are described by Paddy Kwok Leung Chan and co‐workers in article number 1700268 . The DSS‐processed ultra‐thin films with densely packed long alkyl chains act as a p‐channel active layer and growth template for the upper n‐type semiconductor layer.