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Next‐Generation Memory: Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10 9 (Adv. Electron. Mater. 7/2017)
Author(s) -
Yoon Kyung Jean,
Kim Gun Hwan,
Yoo Sijung,
Bae Woorham,
Yoon Jung Ho,
Park Tae Hyung,
Kwon Dae Eun,
Kwon Yeong Jae,
Kim Hae Jin,
Kim Yu Min,
Hwang Cheol Seong
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201770028
Subject(s) - materials science , rectification , crossbar switch , resistive random access memory , optoelectronics , diode , realization (probability) , layer (electronics) , electrical engineering , nanotechnology , voltage , engineering , statistics , mathematics
3DXP memory has emerged as the most powerful next generation non‐volatile memory. In article number 1700152 , Cheol Seong Hwang and co‐workers demonstrate a 3DXP memory with double‐layer resistive‐switching random‐access‐memory architecture. The integrated diode shows the highest cell‐selector performance reported to date. A novel sensing scheme optimized for the device structure enhances the feasibility of ultra‐high‐density 3DXP memory realization.