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Solar Cells: Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors (Adv. Electron. Mater. 3/2017)
Author(s) -
Fioretti Angela N.,
Stokes Adam,
Young Matthew R.,
Gorman Brian,
Toberer Eric S.,
Tamboli Adele C.,
Zakutayev Andriy
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201770011
Subject(s) - materials science , acceptor , ternary operation , semiconductor , passivation , nitride , zinc , hydrogen , tin , solar cell , band gap , nanotechnology , optoelectronics , chemistry , metallurgy , condensed matter physics , physics , organic chemistry , layer (electronics) , computer science , programming language
Enhanced acceptor activation in the ternary semiconductor zinc tin nitride has been achieved by researchers from the National Renewable Energy Laboratory and the Colorado School of Mines. In article number 1600544, A. N. Fioretti demonstrate that hydrogen passivation of acceptors during growth, coupled with post‐growth annealing to remove the hydrogen, suppresses native compensating donor formation and moves the Fermi energy away from the conduction band minimum. This technique is used to produce non‐degenerate, zinc‐rich zinc tin nitride with electron concentration of 10 16 cm −3 , which is suitable for solar cell fabrication.