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Organic Electronics: The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors (Adv. Electron. Mater. 1/2017)
Author(s) -
Diemer Peter J.,
Hayes Jacori,
Welchman Evan,
Hallani Rawad,
Pookpanratana Sujitra J.,
Hacker Christina A.,
Richter Curt A.,
Anthony John E.,
Thonhauser Timo,
Jurchescu Oana D.
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201770005
Subject(s) - materials science , organic electronics , transistor , organic semiconductor , thin film transistor , optoelectronics , electronics , trapping , crystallization , field effect transistor , penning trap , trap (plumbing) , electron , organic field effect transistor , semiconductor , analytical chemistry (journal) , nanotechnology , chemical engineering , organic chemistry , chemistry , electrical engineering , voltage , ecology , engineering , biology , layer (electronics) , quantum mechanics , physics , environmental engineering
Organic field‐effect transistors exhibit best their performance when the semiconductor film consists of a single‐isomer. In devices containing a mixture of the syn and anti‐isomers of 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)‐anthradithiophene, a peak appears in the density of states, suggesting that a discrete trapping state is present, as reported by P. J. Diemer et al. in article number 1600294. This is eliminated through vibration‐assisted crystallization due to a vertical phase separation of the isomers.