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Transient Resistive Switching Memory of CsPbBr 3 Thin Films
Author(s) -
Lin Qiqi,
Hu Wei,
Zang Zhigang,
Zhou Miao,
Du Juan,
Wang Ming,
Han Shuai,
Tang Xiaosheng
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700596
Subject(s) - materials science , optoelectronics , transient (computer programming) , electronics , resistive random access memory , perovskite (structure) , layer (electronics) , non volatile memory , switching time , electrode , resistive touchscreen , nanotechnology , flexible electronics , pedot:pss , voltage , electrical engineering , computer science , chemical engineering , chemistry , engineering , operating system
Recently, transient electronic devices play an indispensable role in modern disposable electronics and create potential application fields that cannot be addressed with conventional electronic devices or systems. However, the choice of transient materials has some limitations. It is therefore of great significance to explore transient electrodes, materials, and substrates that can undergo rapid and complete degradation on demand. In this work, the CsPbBr 3 thin films as the switching layer are utilized to implement transient memory devices with a flexible Ag/CsPbBr 3 /PEDOT:PSS/ITO structure. This flexible nonvolatile memory device exhibits reproducible resistive switching performance, uniform switching voltages, concentrated distributions of high and low resistance states, and good mechanical stability over 50 bending times. The elemental mapping images of the memory device reveal that the resistive switching mechanism is interpreted through electrochemical formation/dissolution of metallic Ag filaments in CsPbBr 3 layer. More importantly, it is demonstrated that the CsPbBr 3 films and memory device can be dissolved rapidly in deionized water within 60 s, showing the transient characteristics. In addition, the optical and electrical properties disappear completely after the device dissolved in deionized water. This work demonstrates that the all‐inorganic perovskite CsPbBr 3 ‐based transient memory devices have great potential for applications in secure data storage systems and disposable electronics.