Premium
Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization
Author(s) -
Gritsenko Vladimir A.,
Novikov Yuriy N.,
Perevalov Timofey V.,
Kruchinin Vladimir N.,
Aliev Vladimir S.,
Gerasimova Alina K.,
Erenburg Simon B.,
Trubina Svetlana V.,
Kvashnina Kristina O.,
Prosvirin Igor P.,
Lanza Mario
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700592
Subject(s) - xanes , materials science , extended x ray absorption fine structure , zirconium , amorphous solid , x ray photoelectron spectroscopy , spectroscopy , absorption spectroscopy , absorption (acoustics) , electron , oxide , nanoscopic scale , electronic structure , stoichiometry , x ray spectroscopy , analytical chemistry (journal) , condensed matter physics , chemistry , nanotechnology , crystallography , optics , physics , nuclear magnetic resonance , composite material , metallurgy , quantum mechanics , chromatography
X‐ray photoelectron spectroscopy, extended X‐ray absorption fine structure spectroscopy (EXAFS), X‐ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum‐chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrO x slightly enriched with zirconium. The experimental data show that the ZrO x material consists of stoichiometric ZrO 2 , metallic Zr, and zirconium suboxides ZrO y . A model of nanoscale spatial potential fluctuations in ZrO x is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrO x ‐based flash memory element with giant retention time is proposed.