Premium
Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO 3
Author(s) -
Lu Zengxing,
Yang Xiaodong,
Jin Chen,
Li Peilian,
Wan Jianguo,
Liu Junming
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700551
Subject(s) - materials science , optoelectronics , doping , photovoltaic system , ferroelectricity , photovoltaic effect , non volatile memory , voltage , electrical conductor , nanotechnology , electrical engineering , composite material , dielectric , engineering
In ferroelectric films, the resistance switching (RS) and ferroelectric photovoltaic effects are ideal for developing next‐generation electronic devices, especially memory devices. In this work, a feasible electric‐optical memory prototype based on both effects is proposed, which can operate with electric writing and optical reading, and realized in Ti‐doped BiFeO 3 films. The RS behavior and the photovoltaic effect at different stage of RS are measured carefully. The results show that the films exhibit filament‐type RS effect. Furthermore, the photovoltaic open‐circuit voltage is demonstrated to be well controlled by switching the resistance state, and such a manipulation can be repeated reliably. By carrying out first‐principles calculations, the working mechanism of the devices is further analyzed, which reveals that the doping of Ti plays a crucial role in the occurrence of the filament‐type RS effect and the improvement of photovoltaic effect. This work provides a feasible avenue to develop high‐performance and low‐power‐consumption memory devices.