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Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2
Author(s) -
Park Min Hyuk,
Chung ChingChang,
Schenk Tony,
Richter Claudia,
Hoffmann Michael,
Wirth Steffen,
Jones Jacob L.,
Mikolajick Thomas,
Schroeder Uwe
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700489
Subject(s) - materials science , ferroelectricity , orthorhombic crystal system , condensed matter physics , atmospheric temperature range , magnetization , doping , phase transition , polarization (electrochemistry) , diffraction , magnetic field , optoelectronics , dielectric , optics , thermodynamics , chemistry , physics , quantum mechanics
The structural origin of the temperature‐dependent ferroelectricity in Si‐doped HfO 2 thin films is systematically examined. From temperature‐dependent polarization‐electric field measurements, it is shown that remanent polarization increases with decreasing temperature. Concurrently, grazing incidence X‐ray diffraction shows an increase in the orthorhombic phase fraction with decreasing temperature. The temperature‐dependent evolution of structural and ferroelectric properties is believed to be highly promising for the electrocaloric cooling application. Magnetization measurements do not provide any indication for a change of magnetization within the temperature range for the strong crystalline phase transition, suggesting that magnetic and structural properties are comparatively decoupled. The results are believed to provide the first direct proof of the strongly coupled evolution of structural and electrical properties with varying temperature in fluorite oxide ferroelectrics.