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Enhanced Stability of Black Phosphorus Field‐Effect Transistors via Hydrogen Treatment
Author(s) -
Wan Bensong,
Zhou Qionghua,
Zhang Junying,
Wang Yue,
Yang Bingchao,
Lv Weiming,
Zhang Baoshun,
Zeng Zhongming,
Chen Qian,
Wang Jinlan,
Wang Wenhong,
Wen Fusheng,
Xiang Jianyong,
Xu Bo,
Zhao Zhisheng,
Tian Yongjun,
Liu Zhongyuan
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700455
Subject(s) - black phosphorus , materials science , degradation (telecommunications) , hydrogen , transistor , optoelectronics , field effect transistor , nanotechnology , phosphorus , chemical engineering , chemistry , electrical engineering , metallurgy , computer science , telecommunications , organic chemistry , voltage , engineering
Atomically thin black phosphorus (BP) exhibits great potential for wide applications in future electronic and optoelectronic devices. However, BP exhibits fast ambient degradation and is thus severely limited in practical applications. Here, a simple strategy using hydrogen treatment to enhance the environmental stability of BP flakes is reported. Owing to the drastically suppressed ambient degradation by hydrogen treatment, atomic BP flakes are just slightly corroded on the surface even after up to 4 weeks in air, and more impressively, the BP field‐effect transistors still maintain over 85% of their initial mobility and I ON / I OFF ratio. First‐principle calculations indicate that the hydrogen molecules are probably embedded between BP layers, and shift down the conduction band minimum, which strongly protects against the formation of superoxide on the surface and thus suppresses the ambient degradation of BP. This study provides a simple and nondestructive route to achieve air‐stable BP devices.