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Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO 2 Nanofilms
Author(s) -
Pang Qingqing,
Chen Hongliang,
Wang Xiuyan,
Wang Tao,
Wang Deyan,
Feng Shaoguang,
Lu Hongliang,
Li Qiaowei
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700424
Subject(s) - materials science , transistor , field effect transistor , graphene , fabrication , schottky barrier , optoelectronics , nanotechnology , rectification , modulation (music) , dielectric , electrical engineering , voltage , medicine , philosophy , alternative medicine , engineering , pathology , diode , aesthetics
Ionic liquid‐gated electric double layer transistors (EDLTs), bottom‐gated field effect transistors (FETs), and vertical Schottky barrier transistors are fabricated by utilizing in situ prepared heterostrutural nanofilms. The nanofilms feature graphene scaffolds on top of high‐k ZrO 2 dielectric, which allow transfer‐free fabrication of various transistor devices. Both the ionic liquid‐gated EDLT and bottom‐gated FET feature p‐type characteristic behaviors with notable I on / I off ratio and effective carrier modulation ability. Furthermore, the applicability of the layered structure is demonstrated in construction of vertical Schottky barrier transistors, and evident rectification behavior is revealed. With the capability to construct multilayer heterostructural nanofilms on various substrates and further optimizing the interfaces between these layers for targeted modulation, the presented electronic materials show potential application in graphene‐based transistor fabrication.