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Sb 2 Se 3 Thin‐Film Photovoltaics Using Aqueous Solution Sprayed SnO 2 as the Buffer Layer
Author(s) -
Lu Shuaicheng,
Zhao Yang,
Chen Chao,
Zhou Ying,
Li Dengbing,
Li Kanghua,
Chen Wenhao,
Wen Xixing,
Wang Chong,
Kondrotas Rokas,
Lowe Nathan,
Tang Jiang
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700329
Subject(s) - materials science , buffer (optical fiber) , band gap , layer (electronics) , photovoltaics , thin film , optoelectronics , absorption (acoustics) , phase (matter) , photovoltaic system , nanotechnology , chemical engineering , composite material , chemistry , telecommunications , organic chemistry , computer science , engineering , ecology , biology
Sb 2 Se 3 is a promising photovoltaic material due to its suitable bandgap, strong light absorption, simple phase, nontoxicity, and earth‐abundant constituents. Currently, most Sb 2 Se 3 thin‐film solar cells are based on toxic CdS as the buffer layer. Here, for the first time, non‐toxic, wide‐bandgap, and chemically stable SnO 2 is introduced as the buffer layer instead of CdS to build superstrate SnO 2 /Sb 2 Se 3 thin‐film solar cells. The phase of sprayed SnO 2 films and device band alignment are investigated in detail. SnO 2 buffer layer annealed at 480 °C exhibits the lowest interfacial defect density and best device performance. Finally, 3.05% efficiency is achieved and the devices show excellent storage and light‐soaking stability. This preliminary experimental study implies that SnO 2 has potential for developing high‐efficiency, stable, and environmentally friendly Sb 2 Se 3 ‐based solar cells.