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Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures
Author(s) -
Wang Le,
Zhang Qinghua,
Chang Lei,
You Lu,
He Xu,
Jin Kuijuan,
Gu Lin,
Guo Haizhong,
Ge Chen,
Feng Yaqing,
Wang Junling
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700321
Subject(s) - materials science , heterojunction , perovskite (structure) , condensed matter physics , fabrication , resistive touchscreen , nanotechnology , optoelectronics , oxygen , chemical engineering , electrical engineering , engineering , medicine , chemistry , physics , alternative medicine , pathology , organic chemistry
The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO 3 ) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO 3 /Nb‐SrTiO 3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO 3 /Nb‐SrTiO 3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 10 5 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO 3 . The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates.