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Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector
Author(s) -
Ji Xu,
Chen Liang,
Xu Mengxuan,
Dong Mei,
Yan Kun,
Cheng Shuang,
Kong Xueqian,
Wang Tongyao,
Liu Jiandang,
Gu Bingchuan,
Wang Huanhua,
Liu Zhiyong,
Wang Shuao,
Huang Feng,
Ouyang Xiaoping
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700307
Subject(s) - semiconductor , materials science , doping , detector , nanotechnology , semiconductor device , surface modification , modulation (music) , optoelectronics , optics , mechanical engineering , physics , engineering , layer (electronics) , acoustics
Controllable and repeatable crystal imperfection modulation engineering (CIME) is important for the development of semiconductor science and technology. However, for wide band gap semiconductors (WBGSs), there still lacks universal and reliable CIME. Here, based on the general idea of chemical composition complete expression design, a well‐designed, repeatable, and feasible CIME for ZnO is introduced, making free modulation of carrier in WBGS become possible. Briefly, this extraordinary CIME is dominated by two innovative procedures: an electrochemical doping and a strong oxidizing atmosphere annealing. The proposed CIME is a repeatable and universal carrier modulation project, which holds technological promise for various WBGS‐based semiconductor devices. Benefiting from this CIME, an α particle detector which operating at a high electric field of 10 7 V cm −1 can be fabricated successfully.