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High‐Mobility Transparent p‐Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics
Author(s) -
Yamada Naoomi,
Ino Ryuichiro,
Tomura Haruka,
Kondo Yuumi,
Ninomiya Yoshihiko
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700298
Subject(s) - materials science , optoelectronics , heterojunction , rectification , flexible electronics , semiconductor , electronics , amorphous solid , diode , electron mobility , thin film transistor , layer (electronics) , nanotechnology , crystallography , electrical engineering , chemistry , voltage , engineering
Transparent p‐type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p‐type transparent oxide semiconductors. Mildly heat‐treated CuI layers have mobilities of ≈20 cm 2 V −1 s −1 , which are comparable to those of p‐type GaN epilayers. Highly transparent p–n diodes with sufficient rectification ratio (10 6 ) can be manufactured by employing a heterojunction of p‐type CuI and amorphous n‐type In‐Ga‐Zn‐O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p‐type semiconductor for flexible transparent electronics.