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Dual Modulated Lateral Photoresistance Effect Observed on Silicon‐Based Discontinuous Copper Film
Author(s) -
Gan Zhikai,
Zhou Peiqi,
Huang Xu,
Mei Chunlian,
Wang Hui
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700293
Subject(s) - materials science , laser , resistor , photoelectric effect , silicon , optoelectronics , diffusion , dual (grammatical number) , semiconductor , optics , electrical engineering , voltage , physics , engineering , art , literature , thermodynamics
A dual modulated lateral photoresistance effect is observed on silicon‐based discontinuous copper film. Through the spatial movement of a laser beam spot, the lateral resistance of the structure can be modulated linearly with polarity under different testing mode. Through applying an electric pulse, the lateral resistance versus laser position curve can be entirely shifted. Carrier diffusion and drift model and charge trap model are set up to explain the dual modulated lateral photoresistance effect. This work adds functionality to Cu materials and is useful for the development of laser‐ and pulse‐modulated photoelectric resistors, switches, and sensors.