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Ferroelectricity Tailored Valley Splitting in Monolayer WTe 2 /YMnO 3 Heterostructures: A Route toward Electrically Controlled Valleytronics
Author(s) -
Song Yan,
Wang Xiaocha,
Mi Wenbo
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700245
Subject(s) - valleytronics , monolayer , ferroelectricity , materials science , heterojunction , electric field , condensed matter physics , optoelectronics , substrate (aquarium) , nanotechnology , ferromagnetism , dielectric , physics , spintronics , oceanography , quantum mechanics , geology
Control of valley degree of freedom in monolayer transition‐metal dichalcogenide (TMDC) has been realized by using optical pumping and magnetic fields. However, an electrical approach is missing and has potential for practical applications. In this paper, valley/ferroelectricity coupling is demonstrated for the first time in a monolayer WTe 2 /YMnO 3 heterostructure. Tunable valley splitting by an electric field is predicted when a valley‐polarized monolayer TMDC is deposited on a multiferroic substrate. The fundamental principle behind this is an intermediate lattice–ferroelectricity coupling. An electric field changes the surface morphology of the substrate, hence the distance, that is, the exchange interaction, between the substrate and monolayer. The resulting tunable valley splitting brings a new component to electrically controlled valleytronics.