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Relation between Interfacial Band‐Bending and Electronic Properties in Organic Semiconductor Pentacene
Author(s) -
Zhang Panlong,
Zhao Shuai,
Wang Haibo,
Zhang Jidong,
Shi Jianwu,
Wang Hua,
Yan Donghang
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700136
Subject(s) - pentacene , band bending , materials science , work function , organic semiconductor , ohmic contact , semiconductor , optoelectronics , fermi level , electronics , bending , electronic structure , work (physics) , electronic band structure , nanotechnology , condensed matter physics , composite material , thin film transistor , electrical engineering , layer (electronics) , physics , quantum mechanics , electron , thermodynamics , engineering
There is still a challenge in organic electronics to effectively tailor interfacial electronic structures for achieving desired electronic properties for optoelectronic devices. This study realizes the tuning of interfacial electronic structures in organic semiconductor pentacene by employing substrates with different work functions. Pentacene layers show downward band‐bending with a low work function, flat band with a middle work function, and upward band‐bending with a high work function. The formation of band‐bending is explained by the electrostatic potential according to the Fermi level position. Different interfacial electronic structures can influence the carrier transport across the interface. Their diodes show different rectifying behaviors due to band‐bending, and ohmic transport is observed for the flat band structure. This work is a promising exploration to realize desired functions of semiconductor devices by tailoring interfacial electronic structures.