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Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
Author(s) -
Richter Claudia,
Schenk Tony,
Park Min Hyuk,
Tscharntke Franziska A.,
Grimley Everett D.,
LeBeau James M.,
Zhou Chuanzhen,
Fancher Chris M.,
Jones Jacob L.,
Mikolajick Thomas,
Schroeder Uwe
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700131
Subject(s) - ferroelectricity , materials science , dopant , hafnia , doping , optoelectronics , lead zirconate titanate , engineering physics , nanotechnology , non volatile memory , field effect transistor , annealing (glass) , transistor , negative impedance converter , dielectric , electrical engineering , ceramic , voltage , composite material , cubic zirconia , voltage source , engineering
Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO 2 appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field‐induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices.