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Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals
Author(s) -
Wu Yanfei,
Ren Xinglong,
McGarry Kathryn A.,
Bruzek Matthew J.,
Douglas Christopher J.,
Frisbie C. Daniel
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700117
Subject(s) - materials science , planar , semiconductor , kelvin probe force microscope , organic semiconductor , stacking , scanning probe microscopy , microscopy , optoelectronics , etching (microfabrication) , nanotechnology , diffraction , atomic force microscopy , optics , chemistry , organic chemistry , computer graphics (images) , physics , layer (electronics) , computer science
Electronic disorder in organic semiconductor single crystals, manifested as parallel surface potential domains with potential variations ranging from tens to hundreds of mV, is observed by scanning Kelvin probe microscopy. Chemical etching and X‐ray diffraction indicate that the potential domains are correlated with planar defects such as stacking faults. The results have important implications for understanding structure–transport relationships in organic semiconductor single crystals.