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Unidirectionally Crystallized Stable n‐Type Organic Thin‐Film Transistors Based on Solution‐Processable Donor–Acceptor Compounds
Author(s) -
Shibata Yosei,
Tsutsumi Jun'ya,
Matsuoka Satoshi,
Minemawari Hiromi,
Arai Shunto,
Kumai Reiji,
Hasegawa Tatsuo
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700097
Subject(s) - materials science , acceptor , tetracyanoquinodimethane , thin film , shearing (physics) , benzothiophene , crystallite , anisotropy , thin film transistor , crystal (programming language) , organic semiconductor , crystallography , optoelectronics , composite material , layer (electronics) , nanotechnology , optics , organic chemistry , condensed matter physics , molecule , thiophene , chemistry , physics , computer science , metallurgy , programming language
Thin‐film formation by solution‐shearing technique is examined for layered‐crystalline donor–acceptor charge‐transfer compounds composed of 2,7‐dioctyl[1]benzothieno[3,2‐ b ][1]benzothiophene as a donor and optionally fluorinated derivatives of tetracyanoquinodimethane ( n = 0, 2, 4) as acceptors. Polycrystalline thin films of the compounds whose crystalline size is over 2 mm along the blade‐scan axis are successfully fabricated, and the formed films demonstrate anisotropic alignment of the crystalline grains where the crystal a ‐axis with the largest transfer integral is parallel to the blade‐scan axis. Such anisotropic alignment of large crystalline grains affords air‐stable n‐type field‐effect operation with a mobility as high as 0.61 cm 2 V −1 s −1 which is comparable to that of the single‐crystal devices.