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High Piezoelectric Performance and Phase Transition in Stressed Lead‐Free (1 – x )(K, Na)(Sb, Nb)O 3 ‐ x (Bi, Na, K)ZrO 3 Thin Films
Author(s) -
Wang Yumei,
Yao Kui,
Qin Xian,
Mirshekarloo Meysam Sharifzadeh,
Liu Xiaogang,
Tay Francis Eng Hock
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201700033
Subject(s) - materials science , phase boundary , piezoelectricity , tetragonal crystal system , piezoelectric coefficient , thin film , phase (matter) , orthorhombic crystal system , analytical chemistry (journal) , crystallography , crystal structure , nanotechnology , composite material , chemistry , organic chemistry , chromatography
Although high performance piezoelectric properties have been reported in (K, Na)NbO 3 ‐based bulk ceramics by constructing morphotropic phase boundary (MPB) with complex compositions, it is still challenging to achieve excellent piezoelectric properties in thin films with the same MPB compositions due to the serious volatile loss of the alkali constituents. Moreover, the stress due to substrate constraint also changes the film's crystal structure and shifts the film's MPB. Here this study demonstrates the highest ever reported effective piezoelectric strain coefficient d 33 of 184.0 pm V −1 and voltage coefficient g 33 of 39.4 mm V N −1 from macroscale characterization in a solution‐derived lead‐free piezoelectric thin film with a composition of (1 – x )(K, Na)(Sb, Nb)O 3 ‐ x (Bi, Na, K)ZrO 3 (KNSN‐BNKZ x , 0.01 ≤ x ≤ 0.07). With the effective suppression of volatile compositional loss by selecting appropriate combinational chemical agents in the precursor solution, phase transitions from orthorhombic, rhombohedral to tetragonal are observed experimentally and further analyzed theoretically with first principle simulation of the KNSN‐BNKZ x films, and the obtained coexistence of rhombohedral–tetragonal phase at x = 0.05 contributes to the outstanding piezoelectric performance in the tensile stressed films. The results demonstrate a valuable strategy for realizing high‐performance piezoelectric properties in thin films with volatile and complex MPB compositions under stress condition.