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Transistors: Solid State Electrochemical WO 3 Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016)
Author(s) -
Grey Paul,
Pereira Luís,
Pereira Sónia,
Barquinha Pedro,
Cunha Inês,
Martins Rodrigo,
Fortunato Elvira
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670049
Subject(s) - materials science , transistor , transconductance , optoelectronics , electrode , electrochromic devices , electronic circuit , electrochromism , electrochemistry , nanotechnology , voltage , electrical engineering , chemistry , engineering
In article number 1500414, P. Grey et al. report on the role of electrode architecture, device structure, and tungsten oxide channel thickness in room‐temperature sputtered electrochromic transistors. Optimizing these parameters produces devices with improved performance and stability, with an on–off ratio of 5 × 106 and a transconductance (g m) of 3.59 mS, for gate voltages (V G) between −2 and 2 V. Such devices open doors for a wide range of new applications in display technologies, biosensors, fuel cells, and electrochemical logic circuits.