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Thin‐Film Transistors: High‐Performance Flexible Thin‐Film Transistors Based on Single‐Crystal‐Like Germanium on Glass (Adv. Electron. Mater. 8/2016)
Author(s) -
Asadirad Mojtaba,
Gao Ying,
Dutta Pavel,
Shervin Shahab,
Sun Sicong,
Ravipati Srikanth,
Kim Seung Hwan,
Yao Yao,
Lee Keon Hwa,
Litvinchuk Alexander P.,
Selvamanickam Venkat,
Ryou JaeHyun
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670045
Subject(s) - materials science , thin film transistor , optoelectronics , transistor , germanium , saturation (graph theory) , flexible display , electron mobility , layer (electronics) , nanotechnology , electrical engineering , silicon , mathematics , engineering , combinatorics , voltage
This frontispiece illustrates high‐performance, mechanically flexible thin film transistors based on single‐crystal‐like Ge on flexible glass using biaxially textured CeO 2 as a buffer layer, as described by M. Asadirad et al. in article number 1600041. High field‐effect mobility and saturation current levels are achieved, significantly higher than those of other state‐of‐the‐art TFTs. Applications for these TFTs may extend beyond flexible displays. Image courtesy of Jae‐Hyun Ryou and Mojtaba Asadirad.