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Printed Electronics: Vertically Stacked Complementary Organic Field‐Effect Transistors and Logic Circuits Fabricated by Inkjet Printing (Adv. Electron. Mater. 7/2016)
Author(s) -
Kwon Jimin,
Takeda Yasunori,
Fukuda Kenjiro,
Cho Kilwon,
Tokito Shizuo,
Jung Sungjune
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670036
Subject(s) - nand gate , organic field effect transistor , materials science , transistor , inverter , optoelectronics , printed electronics , noise margin , electronic circuit , field effect transistor , nor gate , logic gate , inkwell , nanotechnology , electrical engineering , voltage , engineering , composite material
In article number 1600046, J. Kwon et al. report the first inkjet‐printed vertically stacked complementary organic field‐effect transistors. A p‐type OFET is printed on top of an n‐type OFET with a gate shared in between. Based on the common‐gate transistor‐on‐transistor structure, a complementary inverter array is fabricated with a high static noise margin and reliable characteristics. A universal logic NAND gate representing the complement of AND operation is also demonstrated.