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MOS 2 Impurities: Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS 2 Natural Crystals (Adv. Electron. Mater. 6/2016)
Author(s) -
Molle Alessandro,
Fabbri Filippo,
Campi Davide,
Lamperti Alessio,
Rotunno Enzo,
Cinquanta Eugenio,
Lazzarini Laura,
Kaplan Daniel,
Swaminathan Venkataraman,
Bernasconi Marco,
Longo Massimo,
Salviati Giancarlo
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670033
Subject(s) - impurity , materials science , condensed matter physics , metal , transition metal , electron , metal–insulator transition , variable range hopping , conduction electron , thermal conduction , metallurgy , chemistry , composite material , physics , organic chemistry , quantum mechanics , catalysis
Charged impurities in MoS 2 multilayer crystals can have deep implications in the overall electronic properties. In article number 1600091, Molle and co‐workers report on the incorporation of native Cs impurities into divacancy complexes of the MoS 2 structure. These defects may determine localization effects in the electronic conduction of the multilayer MoS 2 that are reflected in the observation of a variable range hopping transport and a metal‐insulator transition.