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Graphene Photodetectors: Large‐Scale Production of Bismuth Chalcogenide and Graphene Heterostructure and Its Application for Flexible Broadband Photodetector (Adv. Electron. Mater. 5/2016)
Author(s) -
Song Jingchao,
Yuan Jian,
Xia Fang,
Liu Jingying,
Zhang Yupeng,
Zhong Yu Lin,
Zheng Jialu,
Liu Yan,
Li Shaojuan,
Zhao Meng,
Tian Zhiming,
Caruso Rachel A.,
Loh Kian Ping,
Bao Qiaoliang
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670025
Subject(s) - photodetector , materials science , graphene , heterojunction , optoelectronics , photoelectric effect , chalcogenide , broadband , infrared , nanotechnology , optics , physics
In article number 1600077, Bao et al. demonstrate large‐scale production of Bi 2 Se x Te 3‐x –graphene van deer Waals heterostructures using a solvothermal method. Free‐standing films produced from this heterostructure show improved electrical, photoelectric and mechanical properties, making their photoresponsive material promising for flexible photodetectors that can operate from visible to near‐infrared wavelengths.